发明名称 |
Field effect transistor with a high breakdown voltage and method of manufacturing the same |
摘要 |
An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective oxide layer. Lightly doped source/drain regions are formed under the protective oxide layer. The protective oxide layer protects the lightly doped source/drain regions. Accordingly, the protective oxide layer prevents the electric field from being concentrated to a bottom corner portion of the gate structure. In addition, the effective channel length is elongated since an electric power source is connected to heavily doped source/drain regions from an outside source of the transistor, instead of being connected to lightly doped source/drain regions.
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申请公布号 |
US2005062104(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040935890 |
申请日期 |
2004.09.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JI-SU;KIM SUNG-HOAN |
分类号 |
H01L29/78;H01L21/28;H01L21/335;H01L21/336;H01L29/10;H01L29/423;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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