Capacitive structure for semiconductor device comprises storage electrode, dielectric layer on storage electrode, plate electrode on dielectric layer, and stabilizing member fixed to storage electrode

摘要

A capacitive structure for a semiconductor device has storage electrode, dielectric layer on storage electrode, plate electrode on dielectric layer, and stabilizing member fixed to the storage electrode for structurally stabilizing the storage electrode. Independent claims are also included for: (1) a method of manufacturing capacitor, comprising: forming contact region on surface portion of semiconductor substrate (200); forming mold layer on substrate; forming stabilizing member at portion of mold layer to structurally stabilize the storage electrode; forming contact hole through the mold layer to expose a sidewall of the stabilizing member and the contact region; forming the storage electrode on the contact region and on the sidewall of the stabilizing member; forming dielectric layer on the storage electrode; and forming plate electrode on the dielectric layer; (2) a semiconductor device comprising: gate structures (225) on semiconductor substrate; first (235) and second (240) contact regions at portions of the substrate between the gate structures; first pad (250) making contact with the first contact region; second pad (255) making contact with the second contact region; bit line making contact with the second pad; storage electrode making contact with the first pad; stabilizing member enclosing an upper portion of the storage electrode; and plate electrode on the dielectric layer; and (3) a method of forming the semiconductor device comprising forming its components.