发明名称 SUBSTRATE TEMPERATURE CONTROLLING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate temperature controlling method whereby a substrate is efficiently cooled or heated by exploiting heat transfer mediated by gas in a vacuum chamber. SOLUTION: In the method, a temperature-controlled heat exchanger and the substrate are placed facing each other at a prescribed distance in the vacuum chamber, and the substrate is cooled or heated to a desired temperature via heat transfer which is mediated by the introduced gas. The method comprises: a step wherein the substrate is delivered to the vacuum chamber and placed so that it faces the heat exchanger; a gas-introducing step wherein evacuation of the vacuum chamber is stopped and the gas with a prescribed pressure, which has previously been pooled in a vessel, is fed into the vacuum chamber to raise internal pressure to a first internal pressure; a gas flow-forming step wherein the gas is fed into and exhausted from the vacuum chamber at a prescribed flow rate to form a gas flow between the substrate and the heat exchanger; and a step wherein the introduction of the gas into the vacuum chamber is stopped and the vacuum chamber is evacuated. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005076093(A) 申请公布日期 2005.03.24
申请号 JP20030309195 申请日期 2003.09.01
申请人 ANELVA CORP 发明人 ENDO TETSUYA;WATANABE NAOKI
分类号 C23C14/54;G11B5/85;(IPC1-7):C23C14/54 主分类号 C23C14/54
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