发明名称 |
Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the same |
摘要 |
A semiconductor device has at least two different gate electrodes. The two different gate electrodes include a first gate electrode on a first gate insulation layer. The first gate electrode includes a first metal-containing conductive pattern on the first gate insulation layer and a second metal-containing conductive pattern. A second gate electrode is provided on a second gate insulation layer and includes a third metal-containing conductive material on the second gate insulation layer. The first metal-containing conductive pattern and the third metal-containing conductive pattern have different work functions from each other. A surface of the second metal-containing conductive pattern and a surface of the third metal-containing conductive pattern are substantially planar. Methods of fabrication such semiconductor devices are also provided.
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申请公布号 |
US2005064653(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040940159 |
申请日期 |
2004.09.14 |
申请人 |
PARK SEONG-GEON;CHOI GIL-HEYUN;KANG SANG-BOM;LEE YOU-KYOUNG |
发明人 |
PARK SEONG-GEON;CHOI GIL-HEYUN;KANG SANG-BOM;LEE YOU-KYOUNG |
分类号 |
H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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地址 |
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