摘要 |
A method for protecting devices such as one shaving organic polymer underlayers (11) during a plasma deposition on the organic polymer underlayer is disclosed, where a protective continuous layer is deposited using organic polymer damage-free techniques in order to not damage the underlayer and to protect it during the plasma deposition of a subsequent film (12, 13). The damage-free technique is a non-plasma process, using only thermal energy and chemical reactions to deposit the continuous layer (14), or a plasma process using power low enough to not damage the underlayer. This method is applicable to organic polymer underlayers such as aromatic hydrocarbons, polytetrafluoroethylene (PTFE), parylene, benzocyclobutene-based polymers (BCB), polyimide, fluorinated polyimide, fluorocarbon-based polymers, poly(arylene ether)-based polymers (PAE), and cyclohexanone-based polymers, and to plasma deposition processes (15), such as plasma enhanced CVD, ALD or NDL of Sio2, Si3N4, nitrided diffusion barrier (TiN, TaN, WN, TiSiN, TaSiN, or WsiN). |
申请人 |
TEGAL CORPORATION;ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE |
发明人 |
ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE |