| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching by which a High-k film can be etched by suppressing the etching of an element separating region or Si substrate. SOLUTION: At the time of etching a film formed on a lower substrate and composed of an aluminum oxide or aluminum silicate, an aqueous solution containing a fluorine compound, organic acid, hydrogen peroxide solution, and organic alkali is used as the etchant. In addition, when a film composed of aluminum oxide or aluminum silicate is used as a gate insulating film, the gate insulating film is etched by this method for etching at the time of processing a gate electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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