| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, by which an impurity can be introduced into a semiconductor region with a small number of steps and, in addition, a large-sized active matrix substrate can be manufactured with a high yield. SOLUTION: After a solution containing an impurity element is discharged onto the semiconductor region by the droplet discharge method, the semiconductor region is melted by having a laser light irradiated on the region, and at the same time, an impurity region is formed by adding and activating the impurity element. Therefore, the impurity can be introduced into the semiconductor region, while the concentration of the impurity element is controlled even if no vacuum process is performed. Consequently, a thin-film transistor (TFT) can be manufactured on a substrate having a large area and the throughput can be improved. In addition, the large-sized active matrix substrate can be manufactured. COPYRIGHT: (C)2005,JPO&NCIPI
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