| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage switching diode having a breakdown voltage of 200 V or above which has a low forward voltage and little backward current and has excellent switching characteristics. SOLUTION: The switching diode comprises the first semiconductor layer 1 of a first conductivity type which has a first principal surface and a second principal surface opposite to the first one, a second semiconductor layer 2 of the first conductivity type which is in contact with the second principal surface of the first semiconductor layer 1 and has an impurity density higher than that of the first semiconductor layer 1, and the third semiconductor layer 3 of a second conductivity type which is in contact with the first principal surface of the first semiconductor layer 1 and has an impurity density higher than that of the first semiconductor layer. The high-speed switching diode has an impurity density of 5E 17 atom/cm<SP>3</SP>or less for the second semiconductor layer 2 and 9E16 atom/cm<SP>3</SP>or less for the third semiconductor layer 3. COPYRIGHT: (C)2005,JPO&NCIPI
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