| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations in an etching rate in an arranged state, and to reduce variations in the shape in the depthwise direction of a recessed pattern by the variations of the etching rate, in a semiconductor device. SOLUTION: When forming a plurality of through holes 102 on an interlayer insulating film 110 made of SiOC, or the like, the content of gas containing nitrogen gas in etching gas is increased. Additionally, etching gas containing C<SB>4</SB>F<SB>6</SB>and that without containing C<SB>4</SB>F<SB>6</SB>are used for successive etching. COPYRIGHT: (C)2005,JPO&NCIPI
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