| 摘要 |
PROBLEM TO BE SOLVED: To prevent the etching rate of a sacrificial layer from becoming higher than that of an interlayer insulating film, and in addition, the interlayer insulating film from being damaged at the time of, for example, performing trench etching on the interlayer insulating film on which the sacrificial layer constituted of a synthetic material (SLAM) prepared by adding a siloxane-based polymer to pigment is formed, and which has a low specific inductive capacity. SOLUTION: The trench etching is performed by using a fluorine producing gas which is not coupled with carbon as an etching gas and introducing the etching gas under a working pressure of≤1.7 Pa. COPYRIGHT: (C)2005,JPO&NCIPI
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