发明名称 |
DRAM STRUCTURE AND FABRICATING METHOD THEREOF |
摘要 |
A dynamic random access memory (DRAM) structure and a fabricating process thereof are provided. In the fabricating process, a channel region is formed with a doped region having identical conductivity as the substrate in a section adjacent to an isolation structure. The doped region is formed in a self-aligned process by conducting a tilt implantation implanting ions into the substrate through the upper portion of the capacitor trench adjacent to the channel region after forming the trench but before the definition of the active region.
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申请公布号 |
US2005062089(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040711623 |
申请日期 |
2004.09.29 |
申请人 |
LEE YUEH-CHUAN;CHEN SHIH-LUNG |
发明人 |
LEE YUEH-CHUAN;CHEN SHIH-LUNG |
分类号 |
H01L21/334;H01L21/8242;H01L27/108;H01L29/76;H01L29/94;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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