发明名称 |
Ion bombardment of electrical lapping guides to decrease noise during lapping process |
摘要 |
A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping
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申请公布号 |
US2005063101(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040964123 |
申请日期 |
2004.10.12 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES |
发明人 |
CHURCH MARK A.;JAYASEKARA WIPUL PERNSIRI;ZOLLA HOWARD GORDON |
分类号 |
G11B5/39;B24B37/04;(IPC1-7):G11B5/33;G11B5/127 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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