发明名称 |
TWO-MASK PROCESS FOR METAL-INSULATOR-METAL CAPACITORS AND SINGLE MASK PROCESS FOR THIN FILM RESISTORS |
摘要 |
MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
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申请公布号 |
US2005064658(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030605260 |
申请日期 |
2003.09.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BIERY GLENN A.;CHEN ZHENG G.;DALTON TIMOTHY J.;LUSTIG NAFTALI E. |
分类号 |
H01L21/02;H01L21/027;H01L21/20;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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