发明名称 TWO-MASK PROCESS FOR METAL-INSULATOR-METAL CAPACITORS AND SINGLE MASK PROCESS FOR THIN FILM RESISTORS
摘要 MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
申请公布号 US2005064658(A1) 申请公布日期 2005.03.24
申请号 US20030605260 申请日期 2003.09.18
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BIERY GLENN A.;CHEN ZHENG G.;DALTON TIMOTHY J.;LUSTIG NAFTALI E.
分类号 H01L21/02;H01L21/027;H01L21/20;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/02
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