发明名称 |
Semiconductor light emitting device |
摘要 |
A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer positioned between an n-type ZnMgSSe cladding layer and a p-type ZnMgSSe cladding layer, and has a barrier layer having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer and the p-type ZnMgSSe cladding layer.
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申请公布号 |
US2005062054(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040829306 |
申请日期 |
2004.04.20 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES. LTD. |
发明人 |
FUJIWARA SHINSUKE;NAKAMURA TAKAO;MORI HIROKI;KATAYAMA KOJI |
分类号 |
H01L33/06;H01L33/28;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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