发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR INITIALIZING THE SAME |
摘要 |
A semiconductor memory device includes memory cell blocks (11) through (14) including a nonvolatile memory cell. The memory cell blocks (11) through (14) include chip-data storing regions (11b) through (14b) for storing chip data containing operation parameters of the semiconductor memory device and pass-flag storing regions (11c) through (14c) for storing pass flags which correspond to the respective chip-data storing regions and show the validity of the stored chip data. The chip-data storing regions store the same chip data.
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申请公布号 |
KR20050029218(A) |
申请公布日期 |
2005.03.24 |
申请号 |
KR20057000828 |
申请日期 |
2005.01.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO.. LTD. |
发明人 |
HIRANO, HIROSHIGE;MURAKUKI, YASUO |
分类号 |
G11C11/22;G11C7/10;G11C7/20;G11C29/04;(IPC1-7):G11C7/20 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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