发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR INITIALIZING THE SAME
摘要 A semiconductor memory device includes memory cell blocks (11) through (14) including a nonvolatile memory cell. The memory cell blocks (11) through (14) include chip-data storing regions (11b) through (14b) for storing chip data containing operation parameters of the semiconductor memory device and pass-flag storing regions (11c) through (14c) for storing pass flags which correspond to the respective chip-data storing regions and show the validity of the stored chip data. The chip-data storing regions store the same chip data.
申请公布号 KR20050029218(A) 申请公布日期 2005.03.24
申请号 KR20057000828 申请日期 2005.01.17
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO.. LTD. 发明人 HIRANO, HIROSHIGE;MURAKUKI, YASUO
分类号 G11C11/22;G11C7/10;G11C7/20;G11C29/04;(IPC1-7):G11C7/20 主分类号 G11C11/22
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