| 摘要 |
PROBLEM TO BE SOLVED: To prevent the sticking of a conductive film for absorbing laser beams and to improve a COD level and surge breakdown voltage at the time of plasma-cleaning an end face as the preprocessing of a process of coating the resonator end face of a semiconductor laser with a dielectric film. SOLUTION: A semiconductor laminated structure body is formed on an n-GaAs substrate, it is cleaved at each resonator length interval and a bar-shaped semiconductor laser where a set of opposing cleavage planes are formed is obtained. Then, the bar-shaped semiconductor laser is installed inside an ECR sputtering device provided with a silicon target, the inside of the device is evacuated, then a cleaning gas for which an argon gas and a nitrogen gas are mixed is introduced to a plasma chamber to generate ECR plasma, one of the cleavage planes is exposed to the plasma for prescribed time and cleaning is executed. Then, an oxygen gas is introduced instead of the nitrogen gas, bias is applied to the target further, and a silicone oxide film which is the end face protective film of low reflectivity is formed on the cleavage plane. COPYRIGHT: (C)2005,JPO&NCIPI
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