发明名称 MAGNETORESISTANCE-EFFECT FILM, AND MAGNETORESISTANCE-EFFECT HEAD AND SOLID-STATE MEMORY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To manufacture a magnetoresistance-effect head having high resolution and narrow core width by forming a magnetoresistance-effect film furnished with required functions without using an antiferromagnetic layer. SOLUTION: The magnetoresistance-effect film comprises a magnetization fixing layer, a first fixed magnetization layer, an anti-parallel coupling intermediate layer, a second fixed magnetization layer, a non-magnetic intermediate layer, magnetization free layer, and a protection layer, sequentially stacked in this order. As the magnetization fixing layer that fixes the magnetization direction of the first fixed magnetization layer, an orientation controlling layer, which is composed of a material that does not make any exchange coupling action with the first fixed magnetization layer and which fixes the magnetization direction of the second fixed magnetization layer to one direction, is provided. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079487(A) 申请公布日期 2005.03.24
申请号 JP20030310946 申请日期 2003.09.03
申请人 FUJITSU LTD 发明人 NOMA KENJI
分类号 G11B5/39;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;(IPC1-7):H01L43/08 主分类号 G11B5/39
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