| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device having an interlayer insulating film of a low dielectric constant containing an organic thin film having a relative dielectric constant of 2.0-2.4. SOLUTION: At the time of forming an inorganic film 15 on the organic material 12, the adhesive property between the organic thin film and the inorganic film is improved by forming an Si-containing layer 13, by treating the surface of the underlying organic film with an SiH<SB>4</SB>gas after the surface is treated with plasma, and successively forming an Si-containing surface reforming agent layer 14 on the layer 13. By this process, the occurrence of defects, such as the peeling of films, cracks, etc., can be prevented in a multilayered wiring forming process and the electronic device, such as the semiconductor device provided with an organic thin film having a low dielectric constant can be provided. COPYRIGHT: (C)2005,JPO&NCIPI
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