| 摘要 |
PROBLEM TO BE SOLVED: To provide a ultra-high density data storage device using phase-change diode memory cells. SOLUTION: The ultra-high density data storage device 200 is provided with a plurality of emitters for directing beams of directed energy, a layer 202 for forming multiple data storage cells, layered diode structure 202, 204 for detecting a memory or a data state of the storage cells, a phase-change data storage layer 202 capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure 202, 204, comprising a material containing copper, indium, and selenium. COPYRIGHT: (C)2005,JPO&NCIPI
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