发明名称 |
Positive resist composition and pattern-forming method using the same |
摘要 |
A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1&Parenopenst;A2-SO3H)n (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.
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申请公布号 |
US2005064326(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040941822 |
申请日期 |
2004.09.16 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
YASUNAMI SHOICHIRO;WADA KENJI;KODAMA KUNIHIKO;SATO KENICHIRO |
分类号 |
G03F7/004;G03C1/76;G03F7/039;H01L21/027;(IPC1-7):G03C1/76 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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