| 摘要 |
A nitride semiconductor light emitting device with a photonic crystal resonance cavity is provided to increase luminous efficiency and effectively radiate the heat generated in the operation of a device, by epitaxially growing a nitride semiconductor light emitting device on a silicon substrate, by attaching the nitride semiconductor light emitting device to a heat sink transfer substrate and by forming a photonic crystal on the silicon substrate. A structure of a light emitting device includes a buffer layer, a clad layer, an active layer or a diffraction grating structure layer on a silicon substrate(21), composed of a nitride semiconductor. The structure of the light emitting device is attached to a heat sink transfer substrate. A structure of a photonic crystal resonance cavity is formed on the silicon substrate. Holes or silicon pillars are periodically disposed in the silicon substrate by an etch process. |
