MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS USED THEREFOR AND LIQUID CRYSTAL DISPLAY MANUFACTURED

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device in which the activation of impurity ion is processed at comparatively low temperatures, a semiconductor manufacturing apparatus used therefor and a liquid crystal display manufactured thereby.

SOLUTION: A glass substrate 2 with a silicon oxide film 12 formed thereon is directly disposed on a stage 55a under a condition that the rear side of the glass substrate 2 is faced downward. The surface of the glass substrate by an optical system 54 is irradiated with the second harmonics of Nd:YAG laser as laser beam slantingly from the front side of the glass substrate 2 disposed on the stage 55a. A part of the irradiated laser beams is permeated through a polysilicon film 6a and is reflected by the rear surface of the glass substrate 2, then, the polysilicon film 6a is irradiated with one part thereof. On the other hand, the residual component of the laser beams is permeated through the glass substrate 2 and is reflected by the mirror surface of the stage 55a, then, the polysilicon film 6a is irradiated with one part thereof.

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