发明名称 |
Etching method for manufacturing semiconductor device |
摘要 |
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.
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申请公布号 |
US2005064674(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040763356 |
申请日期 |
2004.01.23 |
申请人 |
LEE WON-JUN;YOON BYOUNG -MOON;HWANG IN-SEAK;KO YONG-SUN |
发明人 |
LEE WON-JUN;YOON BYOUNG -MOON;HWANG IN-SEAK;KO YONG-SUN |
分类号 |
H01L27/108;H01L21/02;H01L21/311;(IPC1-7):H01L21/20;H01L21/302;H01L21/461 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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