发明名称 System and method to relieve ESD requirements of NMOS transistors
摘要 A system and method relieves ESD requirements on devices in circuits of chips that are susceptible to being damaged from ESD through an external pad. For example, one of the devices can be NMOS transistors having drains (or sources) connected to the external pad(s) and no (or significantly small) current flows from their drains (or sources) to the corresponding pad(s). In order to protect such a device, an ESD protecting system is coupled between the NMOS device and the pad. The ESD protecting system can include an n-type transistor or a p-type transistor.
申请公布号 US2005063111(A1) 申请公布日期 2005.03.24
申请号 US20030668249 申请日期 2003.09.24
申请人 BROADCOM CORPORATION 发明人 WANG HONGWEI
分类号 H01L27/02;H03K17/0814;(IPC1-7):H02H9/00 主分类号 H01L27/02
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