发明名称 |
Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
摘要 |
In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type base layer, the point of the highest impurity concentration is located closer to the n-type base layer than the junction with the emitter layer. In other words, the pinch-off of the channel is generated in the position closer to the n-type base layer than to the junction between the p-type base layer and the n-type emitter layer.
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申请公布号 |
US2005062064(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040962713 |
申请日期 |
2004.10.13 |
申请人 |
HATTORI HIDETAKA;YAMAGUCHI MASAKAZU |
发明人 |
HATTORI HIDETAKA;YAMAGUCHI MASAKAZU |
分类号 |
H01L29/749;H01L21/331;H01L29/06;H01L29/10;H01L29/739;H01L29/745;H01L29/78;(IPC1-7):H01L29/739 |
主分类号 |
H01L29/749 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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