| 摘要 |
A wet cleaning method for a semiconductor substrate is provided to control generation of a moat by varying the temperature of a cleaning solution and by shortening an interval of etch time. A trench is formed by using a pad nitride layer. After an oxide layer is deposited to fill the trench, a semiconductor substrate in which a planarization process is performed on the oxide layer is loaded into wet cleaning equipment(S200). The semiconductor substrate is etched to eliminate the oxide layer remaining on the resultant structure(S202). A cleaning process is performed on the semiconductor substrate from which the remaining oxide layer is removed(S204). The pad nitride layer is removed by using a H3PO4 solution wherein the temperature of the H3PO4 solution is variably controlled to uniformly maintain the etch rate of the pad nitride layer according to a time interval of the use of the H3PO4 solution(S206). A cleaning process is performed on the semiconductor substrate from which the pad nitride layer is removed(S208). The semiconductor substrate is unloaded from the wet cleaning equipment(S210).
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