COMPOSITION FOR FORMING DIELECTRIC, METHOD OF MANUFACTURING THE SAME, DIELECTRIC FILM USING THE SAME AND CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a composition for forming a dielectric by which the process temperature is lowered and the treatment is carried out for a short time to remarkably improve the productivity in the formation of a dielectric film having ABOXtype crystal structure, a method of manufacturing the same, the dielectric film using the composition and a capacitor.

SOLUTION: The composition for forming the dielectric contains a particle having ABOXtype crystal structure and ≤100 nm average particle diameter and an organic solvent and the concentration of water contained in the composition is ≤1 wt.%. The dielectric film having excellent dielectric characteristics even under a mild condition of ≤400°C is formed by the composition for forming the dielectric. The forming process of the dielectric film is simplified compared to a conventional process necessitating the crystallization by high temperature heating and firing in a heating furnace and the productivity is extremely improved. Because the crystallization process at a high temperature is dispensed with, the crystallized film having excellent dielectric characteristics is formed even on low heat resistant various substrates on which it is impossible to form the crystallized film by the conventional sol-gel method in which a crystallization process at a high temperature is necessary.

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