| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which performs polymer elimination comparatively easily without increasing processor, improves adhesiveness of a bonding pad opening and wire bonding without generating abnormal growth of metal wiring of a lower layer, and improves yield. SOLUTION: Elimination treatment of polymer which adheres to a metal film surface layer after bonding pad opening treatment is performed by surface etching treatment using O<SB>2</SB>+ CF<SB>4</SB>in an identical treatment room or a following chamber or another equipment chamber after bonding pad opening treatment. Concerning a sample subjected to the O<SB>2</SB>+ CF<SB>4</SB>plasma treatment, O and F are not detected on the metal film surface, so that it can be confirmed that there is countermeasure validity to deposition film elimination by the O<SB>2</SB>+ CF<SB>4</SB>plasma treatment. COPYRIGHT: (C)2005,JPO&NCIPI |
