发明名称 |
Method for controlling critical dimensions during an etch process |
摘要 |
A method for controlling dimensions of structures formed on a substrate using an etch process includes measuring pre-etch dimensions of the respective elements of a patterned etch mask and adjusting a process recipe of the etch process using the results of the pre-etch measurements. In one application, the method is used to control critical dimensions of a gate structure of a field effect transistor.
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申请公布号 |
US2005064714(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030666317 |
申请日期 |
2003.09.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MUI DAVID;LIU WEI;SASANO HIROKI;YOO KYEONGRAN |
分类号 |
H01L21/28;H01L21/00;H01L21/302;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213;H01L21/336;H01L21/461;H01L21/66;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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