| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an EEPROM (nonvolatile memory) having a page function capable of performong a high speed and non-error reading operation. <P>SOLUTION: Reference cell arrays RFX0-n provided with reference cells of two systems are provided, reference signals RF1, RF2 outputted from the selected reference cell array RFXi are amplified respectively by amplifiers AP1, AP2 and reference voltages VRF1, VRF2. The reference voltage VRF1 is supplied to sense amplifiers SAA0-SAD1 corresponding to page A-D, and the reference voltage VRF2 is supplied to sense amplifiers SAD0-SAH1 corresponding to page E-H. thereby, rise of reference voltage is quickened more than conventional EEPROM in which reference voltage of one system are supplied to all sense amplifiers, and the high speed non-error reading operation can be performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
