发明名称 Method for forming resist pattern, method for manufacturing master information carrier, magnetic recording medium, and magnetic recording/reproducing apparatus, and magnetic recording/reproducing apparatus
摘要 The present invention provides a method for forming a resist pattern that allows a fine pattern to be formed by preventing undesirable diffraction of light in exposure. This method includes: a step of forming a resist film 2 on a surface of a base 1; a step of forming a protrusion 252 and an air-evacuating recess 251 on the resist film 2 by exposing the resist film 2 to light and developing the same; a step of bringing the resist film 2 and a photomask 31 in which a predetermined pattern is formed into close contact with each other by performing evacuation through the air-evacuating recess 251 in the state where the photomask 31 is superimposed on the resist film 2; and a step of exposing a portion of the resist film 2 that corresponds to the pattern of the photomask 31 to light, wherein the pattern of the photomask 31 is formed so as to extend from a region facing the protrusion 252 to a region facing the air-evacuating recess 251 on the resist film 2.
申请公布号 US2005064346(A1) 申请公布日期 2005.03.24
申请号 US20040944301 申请日期 2004.09.17
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YANAGI TERUMI;SAKAGUCHI MASAYA
分类号 G03F7/00;G03F7/20;G11B5/82;G11B5/84;G11B5/86;(IPC1-7):G03F7/20 主分类号 G03F7/00
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