发明名称 |
Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices |
摘要 |
A semiconductor memory comprises a first capacitor for storing digital data connecting a cell plate line to a first bit-line through a first select transistor. The first select transistor is activated through a connection to a word line. At least one reference capacitor provides a reference voltage to a reference bit-line. A sense amplifier connected to the first and reference bit-lines measures a differential read signal on the first and reference bit-lines. A toggle flip flop alternately changes the polarization of charge stored on the reference capacitors.
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申请公布号 |
US2005063212(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030665401 |
申请日期 |
2003.09.18 |
申请人 |
JACOB MICHAEL;REHM NORBERT;JOACHIM HANS-OLIVER;WOHLFAHRT JOERG |
发明人 |
JACOB MICHAEL;REHM NORBERT;JOACHIM HANS-OLIVER;WOHLFAHRT JOERG |
分类号 |
G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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