发明名称 |
Active pixel having reduced dark current in a CMOS image sensor |
摘要 |
The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.
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申请公布号 |
US2005062085(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040945538 |
申请日期 |
2004.09.20 |
申请人 |
HE XINPING;WU CHIH-HUEI;YANG HONGLI |
发明人 |
HE XINPING;WU CHIH-HUEI;YANG HONGLI |
分类号 |
H01L27/146;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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