发明名称 |
Method of manufacturing semiconductor device having SOI structure |
摘要 |
The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.
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申请公布号 |
US6869752(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20020288415 |
申请日期 |
2002.11.06 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TAKAHASHI AKIRA;HARA KOUSUKE;KOBAYASHI MOTOKI;KANAMORI JUN |
分类号 |
H01L21/28;H01L21/285;H01L21/3065;H01L21/311;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L29/786;(IPC1-7):G03F7/00;G03F7/36 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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