发明名称 Mode entrance control circuit and mode entering method in semiconductor memory device
摘要 In a mode entrance control circuit and a mode entering method to stably enter a semiconductor memory device into a predetermined operating mode only when insensitive to a change of a process, temperature, or voltage, etc., and simultaneously satisfying a constant entrance condition, the mode entrance control circuit includes an operation control part for generating an operation enable signal when a first voltage applied through a first pad is over a first determination voltage, a voltage division part for dividing a second voltage applied through a second pad to generate a trimming reference voltage, and a mode entrance signal generating part operated in response to the operation enable signal, for comparing a level of an applied fixed reference voltage with a level of the trimming reference voltage, and for generating a mode entrance enable signal to allow the semiconductor memory device to enter into a predetermined mode.
申请公布号 US6870783(B2) 申请公布日期 2005.03.22
申请号 US20030661581 申请日期 2003.09.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK CHOONG-KEUN;LIM BO-TAK
分类号 G11C7/10;G11C11/4193;G11C29/46;(IPC1-7):G11C11/419 主分类号 G11C7/10
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