发明名称 |
Maskless reflection electron beam projection lithography |
摘要 |
One embodiment disclosed relates to an apparatus for reflection electron beam lithography. An electron source is configured to emit electrons. The electrons are reflected to a target substrate by portions of an electron-opaque patterned structure having a lower voltage level and are absorbed by portions of the structure having a higher voltage level. Another embodiment relates to a novel method of electron beam lithography. An incident electron beam is formed and directed to an opaque patterned structure. Electrons are reflected from portions of the structure having a lower voltage level applied thereto and are absorbed by portions of the structure having a higher voltage level applied thereto. The reflected electrons are directed towards a target substrate to form an image and expose a lithographic pattern.
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申请公布号 |
US6870172(B1) |
申请公布日期 |
2005.03.22 |
申请号 |
US20040851040 |
申请日期 |
2004.05.21 |
申请人 |
KLA-TENCOR TECHNOLOGIES CORPORATION |
发明人 |
MANKOS MARIAN;HESS HARALD F.;ADLER DAVID L.;BERTSCHE KIRK J. |
分类号 |
H01J37/317;(IPC1-7):H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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