发明名称 |
Method and apparatus for the production of a semiconductor compatible ferromagnetic film |
摘要 |
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics. |
申请公布号 |
US6869806(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20030468720 |
申请日期 |
2003.08.21 |
申请人 |
WISYS TECHNOLOGY FOUNDATION, INC. |
发明人 |
CUI YONGJIE;LI LIAN |
分类号 |
C30B23/02;H01F10/193;H01L21/00;H01L21/203;H01L21/302;H01L21/461;(IPC1-7):H01L21/00 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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