发明名称 |
Method for producing quantum dot silicate thin film for light emitting device |
摘要 |
A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.
|
申请公布号 |
US6869864(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20030734230 |
申请日期 |
2003.12.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YIM JIN HEONG;JANG EUN JOO;AHN TAE KYUNG |
分类号 |
C09K11/08;B82B3/00;C08G77/22;C09K11/00;C09K11/56;C09K11/88;C09K11/89;G01N33/53;H01L21/00;H01L21/20;H01L21/368;H01L29/06;H01L33/06;H01L33/28;H01L33/44;H01S5/00;(IPC1-7):H01L21/20 |
主分类号 |
C09K11/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|