发明名称 Semiconductor device having a power down mode
摘要 A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
申请公布号 US6870790(B2) 申请公布日期 2005.03.22
申请号 US20030724781 申请日期 2003.12.02
申请人 发明人
分类号 G11C11/413;G11C5/06;G11C5/14;G11C7/10;G11C8/00;G11C8/12;G11C11/401;G11C11/406;G11C11/407;G11C11/4074;G11C11/4076;G11C11/409;H01L21/8242;H01L27/108;(IPC1-7):G11C8/00 主分类号 G11C11/413
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