发明名称 Organic polarizable gate transistor apparatus and method
摘要 An apparatus having a circuit coupled to the gate contact of field effect transistor wherein the transistor's gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the dielectric layer. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vg in response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the dielectric layer. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.
申请公布号 US6870180(B2) 申请公布日期 2005.03.22
申请号 US20010877844 申请日期 2001.06.08
申请人 LUCENT TECHNOLOGIES INC. 发明人 DODABALAPUR ANANTH;KATZ HOWARD E.;SARPESHKAR RAHUL
分类号 H01L27/105;G11C13/02;H01L21/28;H01L21/8246;H01L21/8247;H01L27/28;H01L29/51;H01L29/76;H01L29/786;H01L29/788;H01L29/792;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L51/30 主分类号 H01L27/105
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