发明名称 |
Method of forming a low temperature polysilicon thin film transistor |
摘要 |
The present invention provides a method of forming a low temperature polysilicon thin film transistor (LTPS TFT). A polysilicon layer including a channel region is formed first. A first and a second plasma enhanced chemical vapor deposition processes are sequentially performed to form a composite gate insulating layer composed of a TEOS-based silicon oxide layer and a silicon nitride layer on the channel region. Finally a gate electrode and a source/drain of the low temperature polysilicon thin film transistor are formed.
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申请公布号 |
US6869834(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20030248770 |
申请日期 |
2003.02.16 |
申请人 |
TOPPOLY OPTOELECTRONICS CORP. |
发明人 |
LIN HUI-CHU |
分类号 |
H01L21/02;H01L21/336;H01L29/49;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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