发明名称 Stacked organic memory devices and methods of operating and fabricating
摘要 The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers-respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
申请公布号 US6870183(B2) 申请公布日期 2005.03.22
申请号 US20020287612 申请日期 2002.11.04
申请人 ADVANCED MICRO DEVICES, INC. 发明人 TRIPSAS NICHOLAS H.;OKOROANYANWU UZODINMA;PANGRLE SUZETTE K.;VANBUSKIRK MICHAEL A.
分类号 G11C11/56;G11C13/02;H01L27/28;H01L51/00;H01L51/30;(IPC1-7):H01L51/20;H01L51/40 主分类号 G11C11/56
代理机构 代理人
主权项
地址