发明名称 |
Oxide semiconductor electrode and process for producing the same |
摘要 |
The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a conductive substrate and an oxide semiconductor layer provided on the conductive substrate. The oxide semiconductor layer is a porous layer comprising porous titania particles which have been joined to each other to define interparticulate communicating pores. Preferably, the pores possessed by the titania particles per se have a diameter of 10 to 40 nm, the interparticulate communicating pores have a diameter of 10 to 70 nm, and the titania particles have an average diameter of 10 to 70 nm.
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申请公布号 |
US6870266(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20030642281 |
申请日期 |
2003.08.18 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
NAKAMURA MASATERU;MORI MIDORI |
分类号 |
H01L31/04;H01L29/12;H01L29/40;H01L31/0224;H01L31/0256;H01L31/075;H01M14/00;(IPC1-7):H01L29/40 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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