发明名称 |
Scalable MOS field effect transistor |
摘要 |
A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.
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申请公布号 |
US6870232(B1) |
申请公布日期 |
2005.03.22 |
申请号 |
US20000550990 |
申请日期 |
2000.04.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN KOK;CHU JACK OON;ISMAIL KHALID EZZELDIN;RISHTON STEPHEN ANTHONY;SAENGER KATHERINE LYNN |
分类号 |
H01L27/095;(IPC1-7):H01L29/94 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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