发明名称 SMT-type structure of the silicon-based electret condenser microphone
摘要 This invention mainly provides a SMT-type structure of the minimized and low-power silicon-based electret condenser microphone. Primarily integrates with the electret, silicon-based, MEMS and microphone techniques to implement the minimized and low-power silicon-based electret condenser microphone. The Silicon-based bi-diaphragm of the composite diaphragm-chip was coated with the low-dielectric macromolecule material to allow the microphone acquires the sufficient electrical charges. Moreover, the impedance matching element of the microphone that MOSFET was implemented by the MEMS technology. Conclusively, this silicon-based electret condenser microphone gains several achievements as the smallest volume, a lower bias voltage, a SMT-type structure, a lower residue stress and a lower assembly cost.
申请公布号 US6870939(B2) 申请公布日期 2005.03.22
申请号 US20010994687 申请日期 2001.11.28
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHIANG DAR-MING;YANG TSUNG-LUNG
分类号 H04R19/01;(IPC1-7):H04R25/00 主分类号 H04R19/01
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