| 摘要 |
Methods are disclosed that provide for structures and techniques for the fabrication of ordered arrangements of crystallographically determined nanometer scale steps on single crystal substrates, particularly SiC. The ordered nanometer scale step structures are produced on the top surfaces of mesas by a combination of growth and etching processes. These structures, sometimes referred to herein as artifacts, are to enable step-height calibration, particularly suitable for scanning probe microscopes and profilometers, from less than one nanometer (nm) to greater than 10 nm, with substantially no atomic scale roughness of the plateaus on either side of each step. |
