发明名称 |
A SEMICONDUCTOR DEVICE HAVING A POCKET LINE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent the oxidation of metal patterns due to a thermal oxidation by enclosing lower and upper metal lines with a metal line capping pattern and a pocket conductive line. An isolation layer for defining an active region is formed on a semiconductor substrate(100). A molding hole(120) is formed within the active region. A pocket insulating pattern(139) is partially formed along an upper surface of the resultant structure. A pocket metal line(155) composed of a pocket conductive line(145), a lower metal line(149) and an upper metal line(152) is formed on the pocket insulating pattern to fill completely the molding hole. A metal line capping pattern(165) is formed on the pocket metal line. The lower and upper metal lines are enclosed with the pocket conductive line. |
申请公布号 |
KR20050027853(A) |
申请公布日期 |
2005.03.21 |
申请号 |
KR20030064237 |
申请日期 |
2003.09.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, JUN KYU;CHOI, YOUNG JOON;KIM, BYUNG YONG |
分类号 |
H01L21/28;H01L23/48;H01L29/423;H01L29/49 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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