发明名称 A SEMICONDUCTOR DEVICE HAVING A POCKET LINE AND FABRICATION METHOD THEREOF
摘要 A semiconductor device and a manufacturing method thereof are provided to prevent the oxidation of metal patterns due to a thermal oxidation by enclosing lower and upper metal lines with a metal line capping pattern and a pocket conductive line. An isolation layer for defining an active region is formed on a semiconductor substrate(100). A molding hole(120) is formed within the active region. A pocket insulating pattern(139) is partially formed along an upper surface of the resultant structure. A pocket metal line(155) composed of a pocket conductive line(145), a lower metal line(149) and an upper metal line(152) is formed on the pocket insulating pattern to fill completely the molding hole. A metal line capping pattern(165) is formed on the pocket metal line. The lower and upper metal lines are enclosed with the pocket conductive line.
申请公布号 KR20050027853(A) 申请公布日期 2005.03.21
申请号 KR20030064237 申请日期 2003.09.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, JUN KYU;CHOI, YOUNG JOON;KIM, BYUNG YONG
分类号 H01L21/28;H01L23/48;H01L29/423;H01L29/49 主分类号 H01L21/28
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