THIN FILM TRANSISTOR HAVING A BLACK MATRIX AND METHOD FOR FABRICATING A POLYSILICON USED IN TFT

摘要

A TFT(Thin Film Transistor) and a method of manufacturing a polycrystalline silicon used therefor are provided to promote crystallization of an amorphous silicon layer at a low temperature for a short time by using a black matrix layer between an insulating substrate and a buffer layer. A black matrix layer(20) is formed on an insulating substrate(10). A buffer layer(30) is formed on the black matrix layer. A polycrystalline silicon layer(41) is formed on the buffer layer by performing an SPC(Solid Phase Crystallization) on an amorphous silicon layer. An MIHL(Metal Insulator Hybrid Layer) is used as the black matrix layer.