发明名称 |
HIGH-POWER PULSED RF AMPLIFIER USING ELECTRON TUBE-SEMICONDUCTOR CASCODE CIRCUIT |
摘要 |
A high-power pulsed RF amplifier is provided to generate an RF output of high power as an RF output of low power by using an electrontube-semiconductor cascode circuit. A semiconductor switch(2) is connected to a cathode of an electrontube to constitute a cascode circuit. A power input member(13) applies a high voltage to an anode of the electrontube. A DC source input member(12) applies a DC power to plural auxiliary electrodes of the electrontube. A pulsed RF input member applies a pulsed RF driving power to the semiconductor switch. A pulsed RF output member(14) generates the pulsed RF output in the electrontube. An impedance matching member(15) controls impedance matching of the pulsed RF output.
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申请公布号 |
KR20050027667(A) |
申请公布日期 |
2005.03.21 |
申请号 |
KR20030064026 |
申请日期 |
2003.09.16 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
HAN, SEUNG HEE;LEE, YEON HEE |
分类号 |
H03K3/543;(IPC1-7):H03K3/543 |
主分类号 |
H03K3/543 |
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