METHOD OF FORMING RECESS CHANNEL OF TRANSISTOR

摘要

A method of forming a recess channel of a transistor is provided to simplify manufacturing processes and to economize fabrication costs by using a hard mask pattern for an isolation layer as a recess forming mask. A substrate(50) is defined with an active region and an isolation region. A hard mask pattern is formed on the resultant structure to cover the active region. A trench is formed in the substrate of the isolation region by performing etching using the hard mask pattern as an etching mask. An isolation layer(54) is filled in the trench. By patterning selectively the hard mask pattern, the substrate of the active region is partially exposed to the outside. A recess(60) is formed within the active region by performing etching on the exposed substrate using the patterned hard mask pattern as an etching mask.